PART |
Description |
Maker |
IXYH30N120C3 IXYP30N120C3 |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD Low V High speed IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IRG4PC60U-P |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package
|
IRF[International Rectifier]
|
IXGP16N60C2D1 IXGA16N60C2 |
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
IXYS, Corp.
|
IXGH60N60B2 IXGT60N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching
|
IXYS Corporation
|
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor Mitsubishi Electric Semiconductor Toshiba Corporation
|
IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
BUP202 Q67078-A4401-A2 BUP202SMD |
IGBT Transistor From old datasheet system IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
IRGS8B60K IRGSL8B60K IRGB8B60K |
INSULATED GATE BIPOLAR TRANSISTOR 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
|
http:// IRF[International Rectifier]
|
GB70NA60UF13 |
High Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A
|
Vishay Siliconix
|